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61.
HUYUDA MENGZHIQING 《高校应用数学学报(英文版)》1998,13(4):473-477
In this paper, the existence theorem of the cone-weak subdiflerential of set-valued mapping in locally convex topological vector space is proved. 相似文献
62.
SINGULARBOUNDARYPROPERTIESOFHARMONICFUNCTIONSANDFRACTALANALYSISWENZHIYINGZHANGYIPINGManuscriptreceivedJanuary11,1995.Revi... 相似文献
63.
该文给出了帐篷映射产生的迭代序列Cesaro平均收敛的条件.研究了它与实数二进展式度量性质之间的联系. 相似文献
64.
第一讲中子散射与散裂中子源 总被引:1,自引:0,他引:1
中子散射是研究物质微观结构和动态的理想工具之一,广泛地应用于凝聚态物质研究和应用的众多学科领域.散裂中子源能是新一代的加速器基脉冲中子源,能为中子散射提供高通量的脉冲中子.文章简明地介绍了中子散射的特点和它作为物质结构和动态探针的优越性,以及散裂中子源的基本原理、发展状况和多学科的应用优势.我国计划建设的散裂中子源CSNS中,靶站将由多片钨靶、铍/铁反射体和铁/重混凝土生物屏蔽体组成.质子束功率100kW下,脉冲中子通量约为2.4×1016n/cm2/s.第一期将设计建造高通量粉末衍射仪、高分辨粉末衍射仪、小角散射仪、多功能反射仪和直接几何非弹性散射仪等五台典型的中子散射谱仪,以覆盖大部分的中子散射研究领域. 相似文献
65.
66.
Tensile impact experiments of EC8.0−24×7 glass fiber bundles at different low temperaturesT(14°C, −40°C and −10°C) and strain rates ɛ were carried out, and complete stress-strain curves were obtained. Within the range
of the experiment temperatures and strain rates, it is found that the initial modulusE, the ultimate strength σmax and the unstable strain ɛ
b
of the glass fiber bundles all increase with ɛ at an identicalT. At an identical ɛ, with the decrease ofT, E and σmax increase; but ɛ
b
increases when 10°C>T>−40°C and decreases when −40°C>T>−100°C. The strain-rate- and temperature-dependent bimodal Weibull statistical constitutive theory was adopted for the statistical
analysis of the experimental results, and the Weibull parameters of single fiber were obtained. The results show that the
bimodal Weibull distribution function is suitable to represent the strength distribution of the glass fiber at low temperature
and different strain rates. The differences in the mechanical properties between EC8.0−24×7 and EC5.5−12 ×14 glass fiber bundles
were also discussed.
Project supported by the National Natural Science Foundation of China (No. 19772058). 相似文献
67.
For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization
types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the
two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results
show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They
are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type
is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate
and spontaneous emission factor. 相似文献
68.
THE EIGENVALUE PERTURBATION BOUND FOR ARBITRARY MATRICES 总被引:1,自引:0,他引:1
Wen Li Jian-xin Chen 《计算数学(英文版)》2006,24(2):141-148
In this paper we present some new absolute and relative perturbation bounds for theeigenvalue for arbitrary matrices, which improves some recent results. The eigenvalueinclusion region is also discussed. 相似文献
69.
We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics. 相似文献
70.
测量了石墨和纳米碳在不同温度下的正电子寿命谱,研究了石墨和纳米碳中缺陷和电子密度随温度的变化.结果表明,纳米碳中缺陷的开空间和缺陷浓度分别大于和高于石墨晶体;纳米碳的平均自由电子密度低于石墨晶体.当温度从25K升至295K时,石墨和纳米碳中的平均自由电子密度随温度的升高而下降:石墨晶体中的自由电子密度随温度的升高变化较小;纳米碳的自由电子密度随温度的升高变化较大.随着温度的升高,石墨和纳米碳中的热空位数量增多,而且这些空位可迁移至微孔洞的内表面使微孔洞的开空间增大. 相似文献